Fabrication of low resistivity p-type ZnO thin films by implanting N+ ions
نویسندگان
چکیده
منابع مشابه
Fabrication of p-Type ZnO:N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature
The oxygen vacancy (VO) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn₃N₂ films in oxygen plasma and successfully prepared p-type ZnO:N films at temperatures ranging from room temperature to 300 °C. The films were characterized by X-ray diffraction (XRD), non-Rutherford ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2008
ISSN: 1742-6596
DOI: 10.1088/1742-6596/100/4/042037